NTE241 (NPN) & NTE242 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package
designed for use in power amplifier and switching circuits.
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
60W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
320mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
JC
3.12
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
80
V
Collector Cutoff Current
I
CEO
V
CE
= 80V, I
B
= 0
1.0
mA
I
CEX
V
CE
= 80V, V
EB(off)
= 1.5V
0.1
mA
V
CE
= 80V, V
EB(off)
= 1.5V, T
C
= +125
C
2.0
mA
I
CBO
V
CB
= 80V, I
E
= 0
0.1
mA
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
1.0
mA
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 1.5A, V
CE
= 2V
20
80
I
C
= 4.0A, V
CE
= 2V
7
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1.5A, I
B
= 150mA
0.6
V
I
C
= 4.0A, I
B
= 1A
1.4
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 1.5A, V
CE
= 2V
1.2
V
Dynamic Characteristics
SmallSignal Current Gain
h
fe
I
C
= 100mA, V
CE
= 2V, f = 1kHz
25
CurrentGain Bandwidth Product
f
T
I
C
= 1A, V
CE
= 4V, f = 1MHz
2.5
MHz
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Base
Collector/Tab
Emitter
.110 (2.79)
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