NTE5570, NTE5572, & NTE5574
Silicon Controlled Rectifier
for Phase Control Applications
Electrical Characteristics: (Maximum values @ T
J
= +125
C unless otherwise specified)
Repetitive Peak Voltages, V
DRM
& V
RRM
NTE5570
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5572
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5574
1200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak Reverse Blocking Voltage, V
RSM
NTE5570
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5572
900V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5574
1300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average OnState Current (Half Sine Wave, 180
, T
C
= +85
C), I
T(AV)
80A
. . . . . . . . . . . . . . . . . . . .
RMS OnState Current (DC @ T
C
= +75
C), I
T(RMS)
125A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak OneCycle, NonRepetitive Surge Current (10ms Duration, Sinusoidal Half Wave), I
TSM
No Voltage Reapplied
1900A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100% V
RRM
Reapplied
1600A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum I
2
t for Fusing (10ms Duration, Sinusoidal Half Wave), I
2
t
No Voltage Reapplied
18000A
2
sec
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100% V
RRM
Reapplied
12700A
2
sec
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Positive Gate Current (5ms Pulse Width), I
GM
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Positive Gate Voltage (5ms Pulse Width), +V
GM
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Negative Gate Voltage (5ms Pulse Width), V
GM
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power (f = 50Hz, Duty Cycle = 50%), P
G
3W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power (50ms Pulse Width), P
GM
12W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Rate of Rise of OffState Voltage (Exponential to 67% Rated V
DRM
), dv/dt
500V/
s
. . . . . . . . . . . .
Rate of Rise of ONState Current, di/dt
(Gate Drive 20V, 65
, with t
r
= 0.5
s, V
d
= Rated V
DRM
, I
TM
= 2 x di/dt snubber 0.2
F)
NonRepetitive
300A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Delay Time, t
d
(Gate Pulse: 10V, 15
Source, t
p
= 6
s, t
r
= 0.1
s, V
d
= rated V
DRM
, I
TM
= 50A)
1
s
. . . . .
Typical TurnOn Time, t
q
(I
TM
= 50A, di/dt = 5A/
s min, V
R
= 50V, dv/dt = 20V/
s, Gate Bias: 0V 25
, t
p
= 500
s) 110
s
OnState Voltage (I
Pk
= 250A, 10ms Sine Pulse), V
TM
1.6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak OffState Current (At V
DRM
), I
DRM
15mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Current (At V
RRM
), I
RRM
15mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Gate Current Required to Trigger, I
GT
(6V AnodetoCathode Applied, T
J
= +25
C)
120mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Gate Voltage Required to Trigger, V
GT
(6V AnodetoCathode Applied, T
J
= +25
C)
2.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Holding (Anode Supply 12V Resistive Load, T
J
= +25
C), I
H
150mA
. . . . . . . . . . . . . . . . .
Maximum Gate Voltage which will not Trigger any Device, V
GD
0.25V
. . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont'd): (Maximum values @ T
J
= +125
C unless otherwise specified)
Operating Temperature Range, T
J
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase (DC Operation), R
tnJC
0.3
C/W
. . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, CasetoHeat Sink, R
thCHS
(Mounting Surface Smooth, Flat, and Greased)
0.1
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.280 (7.11)
Dia Max
Gate
(White)
2.500
(63.5)
Max
6.260
(159.0)
Max
(Terminal 3)
.500 (12.7) Max)
1/220 UNF
1.031 (26.18)
Dia Max
.875 (22.22) Dia
(Ceramic)
Cathode
Cathode
(Red)
Anode
.827
(27.0)
Max
1.227 (31.18) Max
(Across Corners)
For No. 6 Screw
Seating Plane
7.500
(190.5)
Max
(Terminals 1 & 2)
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