NTE2635
Silicon NPN Transistor
Horizontal Deflection
w
/Internal Damper Diode
Description:
The NTE2635 is an enhanced performance, new generation, highvoltage, highspeed switching
NPN transistor with an integrated damper diode in a fullpack envelope intended for use in horizontal
deflection circuits in color TV receivers. This device features exceptional tolerance to base drive and
collector current load variations resulting in a very low worst case dissipation.
Absolute Maximum Ratings:
CollectorEmitter Voltage (V
BE
= 0V), V
CESM
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Base Current, I
B
Continuous (Average over any 20ms period)
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (TurnOff Current)
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
tot
35W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase (With Heat Sink Compound), R
thJC
3.6K/W
. . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoAmbient, R
thJA
55K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Isolation Limiting Value
RMS Isolation Voltage from all
Three Terminals to Case
V
ISOL
f = 5060hz, Sinusoidal Waveform,
R.H.
65%, Clean and Dustfree
2500
V
Capacitance from T2 to External
Heat Sink
C
ISOL
f = 1MHz
10
pF
Static Characteristics
Collector Cutoff Current
I
CES
V
CE
= 1500V, V
BE
= 0, Note 1
1.0
mA
V
CE
= 1500V, V
BE
= 0, T
J
= +125
C,
Note 1
2.0
mA
Note 1. Measured with half sinewave voltage (curve tracer).
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics (Cont'd)
Emitter Cutoff Current
I
EBO
V
EB
= 7.5V, I
C
= 0
140
390
mA
EmitterBase Breakdown Voltage
V
(BR)EBO
I
B
= 600mA
7.5
13.5
V
BaseEmitter Resistance
R
be
V
EB
= 7.5V
33
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
B
= 0, I
C
= 100mA, L = 25mH
700
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 4.5A, I
B
= 1.1A
5.0
V
I
C
= 4.5A, I
B
= 1.29A
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 4.5A, I
B
= 1.7A
1.3
V
DC Current Gain
h
FE
I
C
= 1A, V
CE
= 5V
7
13
23
I
C
= 4.5A, V
CE
= 1V
4.0
5.5
7.5
Diode Forward Voltage
V
F
I
F
= 4.5A
1.6
2.0
V
Dymanic Characteristics
Collector Capacitance
C
c
I
E
= 0, V
CB
= 10V, f = 1MHz
80
pF
TurnOff Storage Time
t
s
I
C
= 4.5A Peak, I
B(end)
= 1.1A,
5.0
6.0
s
TurnOff Fall Time
t
f
L
B
= 6
H, V
BB
= 4V,
(dI
B
/dt = 0.6A/
s)
0.4
0.6
s
.126 (3.2) Dia Max
.181 (4.6)
Max
.405 (10.3)
Max
.114 (2.9)
.622
(15.0)
Max
.252
(6.4)
.531
(13.5)
Min
.118
(3.0)
Max
B
C
E
Isol
.100 (2.54)
.098 (2.5)
BASE
COLLECTOR
EMITTER
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