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Электронный компонент: NTE1751

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NTE3104
Opto Interrupter Module
Photo Reflector, NPN Transistor Output
Description:
The NTE3104 is a subminiature photo reflector whose GaAs infrared emitting diode and silicon tran-
sistor are assembled in the same package allowing for easy installation and handling.
The NTE3104 has an excellent S/N ratio (more than 40dB) and contains a builtin filter for cutting
visible light.
Typical applications for the NTE3104 include strobe detection in audio turntables, tape end detection,
automatic vending machines, and various other automatic control units.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Emitter
Forward Current, I
F
Continuous
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (Note 1)
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Reverse Voltage, V
R
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
75mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Detector
CollectorEmitter Voltage, V
CEO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterCollector Voltage, V
ECO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
20mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
75mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupled
Total Power Dissipation, P
tot
100mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Isolation Voltage (Note 2), V
iso
1000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
20
to +90
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
30
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
10
s, Duty Ratio: 0.01
Note 2. R.H. = 40% to 60% for one minute.
ElectroOptical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter
Forward Voltage
V
F
I
F
= 4mA
1.08
1.15
V
Pulse Forward Voltage
V
FP
I
FP
= 500mA
1.4
V
Reverse Current
I
R
V
R
= 6V
1
A
Peak Wavelength
I
F
= 50mA, T
A
= +25
C
940
nm
Spectral Half Bandwidth
I
F
= 50mA, T
A
= +25
C
50
nm
Capacitance
C
t
V
R
= 0, f = 1MHz
35
pF
Detector
Dark Current
I
CEO
V
CE
= 2V
20
nA
CollectorEmitter Voltage
V
(BR)CEO
i
C
= 100
A
25
V
EmitterCollector Voltage
V
(BR)ECO
i
C
= 100
A
6
V
Coupled
Output Current
I
O
I
F
= 4mA, V
CE
= 2V, d = 1mm
12
125
A
Collector Dark Current
I
CEOD
I
F
= 4mA, V
CE
= 2V
50
nA
Rise Time
t
r
V
CE
= 2V, I
F
= 4mA,
70
500
s
Fall Time
t
f
R
L
= 1k
, d = 1mm
50
500
s
Isolation Resistance
R
iso
R.H. = 40% to 60%, 250V at ED
1000
M
Cathode
Anode
Collector
Emitter
.070 (1.8)
.039 (1.0)
.157 (4.0)
.126
(3.2)
.118
(3.0)
.472
(12.0)
Min