NTE870
Integrated Circuit
Dual Operational Transconductance Amp
Description:
The NTE870 consists of two current controlled transconductance amplifiers each with differential in-
puts and a pushpull output. The two amplifiers share common supplies but otherwise operate inde-
pendently. Linearizing diodes are provided at the inputs to reduce distortion and allow higher input
levels resulting in a 10dB signaltonoise improvement referenced to 0.5 percent THD. Controlled
impedance buffers are provided which are especially designed to complement the dynamic range of
the amplifiers.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Supply Voltage, V+/V
36V or
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage, V
ID
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Diode Bias Current, I
D
2mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Amp Bias Current, I
ABC
2mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Buffer Output Current, I
o
20mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
570mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Input Voltage, V
IN
V+ to V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
20
to +75
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C, V+/V =
15V, I
ABC
= 500
A unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage (V
OS
)
V
IO
0.4
5.0
mV
Input Offset Voltage
I
ABC
= 5
A
0.3
5.0
mV
V
OS
Including Diodes
Diode Base Current, I
D
= 500
A
0.5
5.0
mV
Input Offset Change
5
A
I
ABC
500
A
0.1
mV
Input Bias Current
I
B
0.4
5.0
A
T
A
= 20
to +75
C
1.0
8.0
A
Electrical Characteristics (Cont'd): (T
A
= +25
C, V+/V =
15V, I
ABC
= 500
A)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Transconductance (gm)
gm
6700
9600
13000
mhos
T
A
= 20
to +75
C
5400
mhos
gm Tracking
R
L
= 0, I
ABC
= 5
A
0.3
dB
Peak Output Current
I
OP
R
L
= 0, I
ABC
= 5
A
5.0
A
R
L
= 0, I
ABC
= 500
A
350
500
650
A
R
L
= 0, T
A
= 20
to +75
C
300
A
Peak Output Voltage Positive
V
OP
R
L
=
, 5
A
I
ABC
500
A
+12
14.2
V
Peak Output Voltage Negative
R
L
=
, 5
A
I
ABC
500
A
12
14.4
V
Supply Current
I
CC
I
ABC
= 500
A, two circuit
2.6
mA
V
OS
Sensitivity Positive
SVR
V
OS
/
V+
76.5
94.0
dB
V
OS
Sensitivity Negative
V
OS
/
V
76.5
94.0
dB
Input Offset Current
I
IO
0.1
0.6
A
CMMR
CMR
80
110
dB
Common Mode Range
V
ICM
12.0
13.5
V
Cross Talk
CT
20Hz < f < 20kHz, Note 2
100
100
dB
Differential Input Current
I
ID
I
ABC
= 0, Input =
4V
0.02
100
nA
Leakage Current
I
LEAK
I
ABC
= 0
0.2
0
nA
Input Resistance
R
IN
10
26
k
Open Loop Bandwidth
2
MHz
Slew Rate
SR
50
V/
s
Buffer Input Current
Note 2
0.4
5.0
A
Peak Buffer Output Voltage
Note 2
10
V
Note 1. Open unless otherwise specified. The inputs to the buffers are grounded and the outputs
are open.
Note 2. R
OUT
= 5k
connected from the buffer output to V and the input buffer is connected to
the transconductance amplifier output. I
ABC
= 500
A.
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