NTE3085
Optoisolator
Photon Coupled Bilateral Analog FET
Description:
The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon
photo detector. The detector is electrically isolated from the input and performs like an ideal isolated
FET designed for distortionfree control of low AC and DC analog signals.
Features:
As A Remote Variable Resistor
D
100
to
300M
D
99.9% Linearity
D
15pF Shunt Capacitance
D
100G
I/O Isolation Resistance
As An Analog Signal Switch
D
Extremely Low Offset Voltage
D
60V
PP
Signal Capability
D
No Charge Injection or Latchup
D
t
on
, t
off
15
s
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Infrared Emitting Diode
Power Dissipation (T
A
= +25
C), P
D
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
2.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
Continuous
60mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width 100
s, 100pps)
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width 1
s, 300pps)
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
R
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Photo Detector
Power Dissipation (T
A
= +25
C), P
D
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
4.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Breakdow Voltage, V
(BR)46
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continouos Detector Current, I
D
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Surge Isolation Voltage (Input to Output), V
ISO
Peak
2500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS
1770V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SteadyState Isolation Voltage (Input to Output), V
ISO
Peak
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS
1060V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10sec Max), T
L
+260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Infrared Emitting Diode
Forward Voltage
V
F
I
F
= 16mA
1.1
1.75
V
Reverse Current
I
R
V
R
= 6V
10
A
Capacitance
V = 0, f = 1MHz
50
pF
PhotoDetector (Either Polarity)
Breakdown Voltage
V
(BR)46
I
46
= 10
A, I
F
= 0
30
V
OffState Dark Current
I
46
V
46
= 15V, I
F
= 0
50
nA
V
46
= 15V, I
F
= 0, T
A
= +100
C
50
A
OffState Resistance
r
46
V
46
= 15V, I
F
= 0
300
M
Capacitance
C
46
V
46
= 0, I
F
= 0, f = 1MHz
15
pF
Coupled Electrical Characteristics
OnState Resistance
r
46
I
F
= 16mA, I
46
= 100
A
200
I
F
= 16mA, I
64
= 100
A
200
Isolation Resistance (Input to Output)
V
ISO
V
10
= 500V
100
G
Input to Output Capacitance
V
10
= 0, f = 1MHz
2.5
pF
TurnOn Time
t
on
I
F
= 16mA, R
L
= 50
, V
46
= 5V
15
s
TurnOff Time
t
off
15
s
Resistance, NonLinearity and
Asymmetry
I
F
= 16mA, i
46
= 25
A
RMS
,
f = 1kHz
0.1
%
.260
(6.6)
Max
.350
(8.89)
Max
.350 (8.89)
Max
.300 (7.62)
.200
(5.08)
Max
.085 (2.16) Max
.070 (1.78) Max
.100 (2.54)
1
2
3
5
4
6
Source
N.C.
Drain
1
2
Anode
Cathode
3
N.C.
6
5
4
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