NTE2521
Silicon NPN Transistor
Video Output for HDTV
Features:
D
High Gain Bandwidth Product: f
T
= 400MHz Typ
D
High Breakdown Voltage: V
CEO
250V Min
D
High Current
D
Low Reverse Transfer Capacitance and Excellent HF Response
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector to Base Voltage, V
CBO
250V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
250V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
300mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
600mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
C
1.3W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 150V, I
E
= 0
0.1
A
Emitter Cutoff Current
I
EBO
V
EB
= 2V, I
C
= 0
0.1
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 50mA
60
320
V
CE
= 10V, I
C
= 250mA
20
Gain Bandwidth Product
f
T
V
CE
= 30V, I
C
= 100mA
400
MHz
Output Capacitance
C
ob
V
CB
= 30V, f = 1MHz
4.2
pF
Reverse Transfer Capacitance
C
re
V
CB
= 30V, f = 1MHz
3.4
pF
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 50mA, I
B
= 5mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 50mA, I
B
= 5mA
1.0
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
250
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
250
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
3
V
E
C
B
.315 (8.0)
.130
(3.3)
.295
(7.5)
.433
(11.0)
.610
(15.5)
.118 (3.0)
Dia
.094 (2.4)
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