NTE180 (PNP) & NTE181 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
Description:
The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case
designed for use as output devices in complementary audio amplifiers to 100 watts music power per
channel.
Features:
D
High DC Current Gain: h
FE
= 25 100 @ I
C
= 7.5A
D
Excellent Safe Operating Area
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CER
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
90V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
7.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
200W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.14W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
0.875
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
=+25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CER
I
C
= 200mA, R
BE
= 100
, Note 1
100
V
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 200mA, Note 1
90
V
CollectorBase Cutoff Current
I
CBO
V
CB
= 100V, I
E
= 0
1.0
mA
V
CB
= 100V, I
E
= 0, T
C
= +150
C
5.0
mA
EmitterBase Cutoff Current
I
EBO
V
BE
= 4V, I
C
= 0
1.0
mA
Note 1. Pulse Test: Pulse Width
300
s. Duty Cycle
2%.
Electrical Characteristics (Cont'd): (T
C
=+25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 7.5A, V
CE
= 2V
25
100
BaseEmitter ON Voltage
V
BE(on)
I
C
= 7.5A, V
CE
= 2V
1.3
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 7.5A, I
B
= 750mA
0.8
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 7.5A, I
B
= 750mA
1.3
V
Dynamic Characteristics
Current GainBandwidth Product
f
T
I
C
= 1A, V
CE
= 10V, f = 1MHz
2.0
MHz
Note 1. Pulse Test: Pulse Width
300
s. Duty Cycle
2%.
Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and
NTE181 (NPN).
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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