NTE2311
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high
speed switching applications.
Features:
D
High Blocking Capability: V
CEX
= 1000V
D
Wide Surge Area: I
CSM
= 55A @ 350V
Applications:
D
Switchmode Power Supply
D
DC/DC and DC/AC Converters
D
Motor Control
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (V
BE
= 2.5V), V
CEX
1000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current (t
p
5ms), I
C
Continuous
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current (t
p
5ms), I
B
Continuous
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
tot
T
C
= +25
C
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +60
C
115W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage V
CEO(sus)
I
B
= 0, I
C
= 200mA, L = 25mH
450
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
C
= 0, I
E
= 50mA
7
30
V
Collector Cutoff Current
I
CEX
T
J
= +25
C
V
CE
= V
CEX
,
0.2
mA
T
J
= +125
C
V
BE
= 2.5V
2.0
mA
I
CER
T
J
= +25
C
V
CE
= V
CEX
,
0.5
mA
T
J
= +125
C
R
BE
= 10
4.0
mA
Electrical Characteristics (Cont'd): (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Cont,d)
Emitter Cutoff Current
I
EBO
I
C
= 0, V
BE
= 5V
1
mA
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 8Adc, V
CE
= 5Vdc)
10
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 8A, I
B
= 1.6A
1.5
V
I
C
= 12A, I
B
= 2.4A
5.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 8A, I
B
= 1.6A
1.6
V
Switching Characteristics (Switching Times on Resistive Load)
TurnOn Time
t
on
V
CC
= 150V, I
C
= 8A,
0.55
1.0
s
Storage Time
t
s
I
B1
= I
B2
= 1.6A
1.5
3.0
s
Fall Time
t
f
0.3
0.8
s
Switching Characteristics (Switching Times on Inductive Load)
Storage Time
t
s
T
J
= +25
C
V
CC
= 300V,
3.5
s
T
J
= +125
C
V
BB
= 5V,
L = 3
H,
5.0
s
Fall Time
t
f
T
J
= +25
C
L
B
= 3
H,
I
C
= 8A,
0.08
s
T
J
= +125
C
I
Bend
= 1.6A
0.4
s
Note
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2%
NOTE: Dotted line indicates that
case may have square corners
B
C
E
C
.156
(3.96)
Dia.
.600
(15.24)
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.216 (5.45)
.055 (1.4)
.015 (0.39)
.173 (4.4)
.060 (1.52)
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