NTE2530 (NPN) & NTE2531 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
D
High Current Capacity: I
C
= 2A
D
High Breakdown Voltage: V
CEO
= 400V Min
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector Base Voltage, V
CBO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
15W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
I
CBO
V
CB
= 300V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 100mA
40
200
GainBandwidth Product
NTE2530
f
T
V
CE
= 10V, I
C
= 100mA
60
MHz
NTE2531
40
MHz
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
1.0
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
400
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
400
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
V