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Электронный компонент: NTE2531

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NTE2530 (NPN) & NTE2531 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
D
High Current Capacity: I
C
= 2A
D
High Breakdown Voltage: V
CEO
= 400V Min
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector Base Voltage, V
CBO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
15W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
I
CBO
V
CB
= 300V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 100mA
40
200
GainBandwidth Product
NTE2530
f
T
V
CE
= 10V, I
C
= 100mA
60
MHz
NTE2531
40
MHz
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
1.0
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
400
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
400
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
V
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Output Capacitance
NTE2530
C
ob
V
CB
= 30V, f = 1MHz
15
pF
NTE2531
25
pF
TurnOn Time
NTE2530
t
on
V
CC
= 150V, V
BE
= 5V,
0.085
s
NTE2531
10I
B1
= 10I
B2
= I
C
= 500mA,
R = 300
, R = 20
,
0.12
s
Storage Time
NTE2530
t
stg
R
L
= 300
, R
B
= 20
,
at I
C
= 500mA,
Pulse Width = 20
s,
4.0
s
NTE2531
Duty Cycle
1%, Note 1
3.0
s
Fall Time
NTE2530
t
f
0.6
s
NTE2531
0.3
s
Note 1. For NTE2531, the polarity is reversed.
B
C
E
.197 (5.0)
.256 (6.5)
.090 (2.3)
.090 (2.3)
.059 (1.5)
.275
(7.0)
.295
(7.5)
.002 (0.5)
.002(0.5)