NTE2533
Silicon NPN Transistor
HighDefinition Color Display
Horizontal Deflection Output
Features:
D
High Speed: t
f
= 100ns Typ
D
High Breakdown Voltage: V
CBO
= 1500V
D
High Reliability
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector to Base Voltage, V
CBO
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CES
V
CE
= 1500V
1.0
mA
I
CBO
V
CB
= 800V, I
E
= 0
10
A
Collector Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0
800
V
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
1.0
mA
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1A
8
30
V
CE
= 5V, I
C
= 20A
4
8
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 20A, I
B
= 5A
5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 20A, I
B
= 5A
1.5
V
Storage Time
t
stg
I
C
= 12A, I
B1
= 2.4A,
3
s
Fall Time
t
f
I
B2
= 4.8A
0.2
s
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