NTE2534 (NPN) & NTE2535 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D
Low Collector Emitter Saturation Voltage
Applications:
D
Relay Drivers
D
High Speed Inverters
D
Converters
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector Base Voltage, V
CBO
90V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
C), P
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
I
CBO
V
CB
= 80V, I
E
= 0
0.1
mA
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
0.1
mA
DC Current Gain
h
FE1
V
CE
= 2V, I
C
= 1A
100
280
h
FE2
V
CE
= 2V, I
C
= 6A
30
GainBandwidth Product
f
T
V
CE
= 5V, I
C
= 1A
20
MHz
CollectorEmitter Saturation Voltage
NTE2534
V
CE(sat)
I
C
= 6A, I
B
= 600mA
0.5
V
NTE2535
0.4
V
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
90
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
80
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
6
V
TurnOn Time
t
on
V
CC
= 50V,
0.2
s
Storage Time
NTE2534
t
stg
10I
B1
= 10I
B2
= I
C
= 5A,
Pulse Width = 20
s,
Duty Cycle
1%, Note 1
0.7
s
NTE2535
Duty Cycle
1%, Note 1
1.7
s
Fall Time
NTE2534
t
f
0.1
s
NTE2535
0.2
s
Note 1. For NTE2535, the polarity is reversed.
.615 (15.62)
.190 (4.82)
.126 (3.22) Dia
.215 (5.47)
B
C/
Case
E
.787
(20.0)
.787
(20.0)
.591
(15.02)
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