NTE2538
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D
High Breakdown Voltage and Reliability
D
Fast Switching Speed
D
Wide ASO
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
32A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
D
T
A
= +25
C
3W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
60W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
10%.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 400V, I
E
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
10
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 3.2A
15
50
V
CE
= 5V, I
C
= 16A
10
V
CE
= 5V, I
C
= 10mA
10
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 2A
0.8
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10A, I
B
= 2A
1.5
V
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 2A
20
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
230
pF
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
500
V
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 10mA, R
BE
=
400
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
7
V
CollectorEmitter Sustaining Voltage
V
CEX(sus)
I
C
= 8A, I
B1
= 0.8A, I
B2
= 3.2A,
L = 200
H Clamped
400
V
TurnOn Time
t
on
I
C
= 12A, I
B1
= 2.4A,
0.5
s
Storage Time
t
stg
I
B2
= 4.8A, R
L
= 10
,
V
= 200V
2.5
s
Fall Time
t
f
V
CC
= 200V
0.3
s
.630 (16.0)
.158 (4.0)
.315
(8.0)
.866
(22.0)
.804
(20.4)
B
C
E
.134 (3.4) Dia
.221 (5.6)
.123 (3.1)
.215 (5.45)
.040 (1.0)
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