NTE255
Silicon NPN Transistor
Horizontal Driver, Amp
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
325V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
A
= +25
C), P
D
max
850mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
COLLECTOR LEAD
= +25
C), P
D
max
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Operating Junction Temperature, T
J
max
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase (T
COLLECTOR LEAD
= +25
C), R
thJC
62.5
C/W
. . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (T
A
= +25
C), R
thJA
147
C/W
. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 300V
1.0
A
DC Current Gain
h
FE
I
C
= 50mA, V
CE
= 10V, Note 1
25
I
C
= 100mA, V
CE
= 10V, Note 1
30
I
C
= 250mA, V
CE
= 10V, Note 1
15
I
C
= 500mA, V
CE
= 10V, Note 1
10
50
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 100mA, I
B
= 10mA, Note 1
0.2
0.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 100mA, Note 1
0.9
1.2
V
Transition Frequency
f
T
I
C
= 50mA
30
300
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
15
pF
Input Capacitance
C
ib
V
BE
= 0.5V, f = 1MHz
125
pF
Note 1. Pulse Test: Pulse Width = 300
s.
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