NTE2584
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
D
High Breakdown Voltage, High Reliability
D
Fast Switching Speed
D
Wide ASO Range
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Collector Base Voltage, V
CBO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
C
1.65W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulsed Width
300
s, Duty Cycle
10%.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 500V, I
E
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
10
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 600mA
20
50
V
CE
= 5V, I
C
= 3A
8
GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 600mA
18
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
80
pF
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
= 3A, I
B
= 600mA
1.0
V
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Base Emitter Saturation Voltage
V
BE(sat)
I
C
=3A, I
B
= 600mA
1.5
V
Collector Base Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
800
V
Collector Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 5mA, R
BE
=
500
V
Emitter Base Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
7
V
Collector Emitter Sustaining Voltage
V
CO(sus)
I
C
= 5A, I
B
= 1A, L = 50
H
500
V
V
CEX(sus)
I
C
= 2.5A, I
B1
= I
B2
= 1A,
L = 1mH, Clamped
500
V
TurnOn Time
t
on
V
CC
= 200V, I
C
= 4A,
0.5
s
Storage Time
t
stg
I
B1
= 0.8A, I
B2
= 1.6A,
R = 50
3.0
s
Fall Time
t
f
R
L
= 50
0.3
s
.100 (2.54)
.019 (0.5)
.177 (4.5)
.051 (1.3)
.346
(8.8)
.433
(11.0)
.035
(0.9)
.402 (10.2)
B
C
E
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