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Электронный компонент: NTE2598

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NTE2316
Silicon NPN Transistor
Fast Switching Power Darlington
Description:
The NTE2317 is an NPN transistor in a monolithic Darlington configuration mounted in a TO218 type
package designed for use in automotive ignition applications and inverter circuits for motor controls.
Applications:
D
Automotive Ignition Applications
D
Invert Circuits for Motor Controls
Absolute Maximum Ratings:
CollectorEmitter Voltage (V
BE
= 0), V
CES
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (I
B
= 0), V
CEO
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (I
C
= 0), V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
+25
C), P
tot
105W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Sustaining Voltage V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
450
V
Collector Cutoff Current
I
CES
T
J
= +25
C
V
CE
= 500V,
1
mA
T
J
= +125
C
V
BE
= 0
5
mA
I
CEO
V
CE
= 450V, I
B
= 0
1
mA
Emitter Cutoff Current
I
EBO
I
C
= 0, V
EB
= 5V
20
mA
Note 1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 1.5%.
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5A, I
B
= 50mA, Note 1
1.8
V
I
C
= 7A, I
B
= 140mA, Note 1
1.8
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 5A, I
B
= 50mA, Note 1
2.2
V
I
C
= 7A, I
B
= 140mA, Note 1
2.2
V
Diode Forward Voltage
V
F
I
F
= 7A, Note 1
2.5
V
Note 1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 1.5%.
B
C
E
800
50
NOTE: Dotted line indicates that
case may have square corners
B
C
E
C
.156
(3.96)
Dia.
.600
(15.24)
.550
(13.97)
.430
(10.92)
.500
(12.7)
Min
.216 (5.45)
.055 (1.4)
.015 (0.39)
.173 (4.4)
.060 (1.52)