NTE2638
Silicon NPN Transistor
Darlington
Features:
D
High Voltage, High Forward and Clamped Reverse Energy
D
10A Peak Collector Current
D
80W at +25
C Case Temperature
D
CollectorEmitter Sustaining Voltage: 400V Min at 7A
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specifieid)
CollectorEmitter Voltage (I
B
= 0), V
CEO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
7A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Device Dissipation (T
C
= +25
C), P
D
80W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly to 150
C
0.64W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Device Dissipation (T
A
= +25
C), P
D
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly to 150
C
16mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.56
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
62.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, CasetoHeat Sink (Note 2), R
thCHS
0.7
C/W
. . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8" from case, 10sec), T
L
+260
C
. . . . . . . . . . . . . . . . . . . . . .
Note 1. This value applies for t
w
5ms, duty cycle
10%.
Note 2. This parameter is measured using 0.003" (0.08mm) mica insulator with DowCorning 11
compound on both sides of the insulator, a 0.13832 (formally 632) mounting screw with
bushing, and a mounting torque of 8 in
lb (0.9 n
m).
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0, Note 3
400
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0, Note 3
400
V
CollectorEmitter Sustaining Voltage
V
CEX(sus)
I
C
= 7A
400
V
Collector Cutoff Current
I
CEO
V
CE
= 400V, I
B
= 0
250
A
Emitter Cutoff Current
I
EBO
V
EB
= 8V, I
C
= 0
15
mA
DC Current Gain
h
FE
I
C
= 2.5A, V
CE
= 5V, Note 3, Note 4
150
I
C
= 5A, V
CE
= 5V, Note 3, Note 4
50
I
C
= 7A, V
CE
= 5V, Note 3, Note 4
15
BaseEmitter Voltage
V
BE
I
B
= 100mA, I
C
= 2A, Note 3, Note 4
2.2
V
I
B
= 250mA, I
C
= 5A, Note 3, Note 4
2.3
V
CollectorEmitter Saturation
V
CE(sat)
I
B
= 10mA, I
C
= 1A, Note 3, Note 4
1.5
V
Voltage
I
B
= 100mA, I
C
= 2A, Note 3, Note 4
1.5
V
I
B
= 250mA, I
C
= 5A, Note 3, Note 4
2.0
V
Diode Forward Voltage
V
F
I
F
= 7A, Note 3, Note 4
3.5
V
SmallSignal Current Gain
h
fe
V
CE
= 5V, I
C
= 500mA, f = 1kHz
200
SmallSignal Forward Current
Transfer Ratio
|h
fe
|
V
CE
= 5V, I
C
= 500mA, f = 1kHz
10
Collector Capacitance
C
obo
I
E
= 0, V
CB
= 10V, f = 1MHz
100
pF
ResistiveLoad Switching Characteristics (T
C
= +25
C unless otherwise specified)
TurnOff Storage Time
t
s
I
C
= 5A, I
B1
= 250mA,
3400
ns
TurnOff Fall Time
t
f
I
B2
= 250mA, V
BE(off)
= 7.3V,
R = 50
, Note 5
1520
ns
TurnOff Rise Time
t
r
R
L
= 50
, Note 5
160
ns
TurnOn Delay Time
t
d
20
ns
InductiveLoad Switching Characteristics (T
C
= +25
C unless otherwise specified)
Voltage Storage Time
t
sv
V
(clamp)
= Min V
CEX(sus)
, I
CM
= 5A,
3900
ns
Current Storage Time
t
si
I
B1
= 250mA, I
B2
= 250mA,
Note 5
4700
ns
Voltage Rise Time
t
rv
Note 5
1200
ns
Storage Rise Time
t
ri
1200
ns
TurnOff Crossover Time
t
xo
2000
ns
Note 3. These parameters must be measured using pulse techniques, t
w
= 300
s, duty cycle
2%.
Note 4. These parameters are measured with voltagesensing contacts separate from the current
carrying contacts located within 1/8" (3.2mm) from the device body.
Note 5. Voltage and current values shown are nominal; exact values vary slightly with transistor pa-
rameters.
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