NTE2639
Silicon NPN Transistor
CRT Horizontal Deflection, High Voltage,
High Speed Switch
Description:
The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastgic fullpack
envelope designed for use in horizontal deflection circuits of color TV receivers.
Absolute Maximum Ratings:
CollectorEmitter Voltage Peak Value (V
BE
= 0V), V
CESM
1700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (OpenBase), V
CEO
825V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
DC
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Value
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
DC
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Value
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Base Current (Average over any 20ms period), I
B(AV)
200mA
. . . . . . . . . . . . . . . . . . . . . . .
Reverse Base Current Peak Value (Note 1), I
BM
9A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
HS
+25
C), P
tot
45W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Capacitor Voltage (Human body model (250pF, 1.5k
), V
C
10kV
. . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoHeatsink, R
thJHS
Without Heatsink Compound
3.7K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With Heatsink Compound
2.8K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoAmbient (In Free Air), R
thJA
35K/W
. . . . . . . . . . . . . . . . . .
Note 1. Turnoff current.
Electrical Characteristics: (T
HS
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Isolation Limiting Value and Characteristic
Repetitive Peak Voltage from All Three
Terminals to External Heatsink
V
isol
R.H.
65%; Clean and Dustfree
2500
V
Capacitance from T2 to External
Heatsink
C
isol
f = 1MHz
22
pF
Static Characteristics
Collector Cutoff Current
I
CES
V
CE
= 1700V, V
BE
= 0
1.0
mA
V
CE
= 1700V, V
BE
= 0, T
J
= +125
C
2.0
mA
Emitter Cutoff Current
I
EBO
V
EB
= 7.5V, I
C
= 0A
1.0
mA
EmitterBase Breakdown Voltage
V
(BR)EBO
I
B
= 1mA
7.5
13.5
V
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
B
= 0A, I
C
= 100mA, L = 25mH
825
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 7A, I
B
= 1.75A
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 7A, I
B
= 1.75A
1.1
V
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 0.1A
22
V
CE
= 1V, I
C
= 7A
4.0
6.0
6.5
Dynamic Characteristics (Switching Times, 16kHz Line Deflection Circuit)
TurnOff Storage Time
t
s
I
C(sat)
= 7A, L
C
= 650
H, C
fb
= 18nF,
5.8
6.5
s
TurnOff Fall Time
t
f
V
CC
= 162V, I
B(end)
= 1.5A,
L
B
= 2
H, V
BB
= 4V
0.6
0.8
s
Note 2. Measured with half sinewave voltage (curve tracer).
.630 (16.0) Max
.885
(22.5)
Max
E
.228 (5.8) Max
.118 (3.0)
C
Isol
.215 (5.45)
.712
(18.1)
Min
.177
(4.5)
B
.215 (5.45)
1.063
(27.0)
Max
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