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Электронный компонент: NTE265

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NTE265
Silicon NPN Transistor
Darlington Power Amplifier
Features:
D
Forward Current Transfer Ratio: h
FE
= 10,000 Min
D
Power Dissipation: 1.33W FreeAir @ T
A
= +50
C
D
Hard Solder Mountdown
Applications:
D
Driver, IC Driver
D
Regulator
D
Touch Switch
D
Audio Output
D
Relay Substitute
D
Oscillator
D
ServoAmplifier
D
Capacitor Multiplier
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectortoEmitter Voltage, V
CEO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectortoEmitter Voltage, V
CES
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmittertoBase Voltage, V
EBO
13V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current (Note 1), I
C
Continuous
0.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
1.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
T
C
= +25
C (Note 2)
6.25W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +70
C
4W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +50
C
With Tab
1.33W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Without Tab
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase (Note 2), R
JC
20
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Note 2), R
JA
With Tab
75
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Without Tab
100
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature range (Note 2), T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature range (Note 2), T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from case, 10sec Max, Note 2), T
L
+260
C
. . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 25ms, Duty Cycle = 50%
Note 2. Tab temperature is measured on center of tab, 1/16" from plastic body.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Current Transfer Ratio
h
FE
I
C
= 200mA, V
CE
= 5V
10k
60k
h
fe
I
C
= 20mA, V
CE
= 5V, f = 1kHz
10k
CollectortoEmitter Voltage
V
CEO
I
C
= 10mA
50
V
Collector Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 0.5mA, Note 3
1.5
V
Base Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 0.5mA, Note 3
2.0
V
Collector Cutoff Current
I
CES
V
CE
= 50V, T
J
= +25
C
0.5
A
I
CBO
V
CE
= 50V, T
J
= +150
C
20
A
Emitter Cutoff Current
I
EBO
V
EB
= 13V
0.1
A
Input Impedance
h
ie
I
C
= 20mA, V
CE
= 5V, f = 1kHz
50
500
Collector Capacitance
C
cbo
V
CB
= 10V, f = 1MHz
5
10
pF
Gain Bandwidth Product
f
T
V
CE
= 5V, I
C
= 20mA
75
MHz
Delay Time and Rise Time
t
d
+ t
r
I
C
= 1A, I
B1
= 1mA
100
ns
Storage Time
t
s
I
C
= 1A, I
B1
= I
B2
= 1mA
350
ns
Fall Time
t
f
I
C
= 1A, I
B1
= I
B2
= 1mA
800
ns
Note 3. Pulsed measurement: Pulse Width = 300
s, Duty Cycle
2%.
B
C
E
.070 (1.78) x 45
Chamf
.132 (3.35) Dia
.050 (1.27)
.325
(9.52)
.180 (4.57)
.380 (9.56)
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.400
(10.16)
Min
.100 (2.54)
.100 (2.54)
C
E
B
C