NTE274 (NPN) & NTE275 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier, Switch
Description:
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66
type case designed for general purpose amplifier, lowfrequency switching and hammer driver
applications.
Features:
D
High DC Current Gain: h
FE
= 3000 Typ @ I
C
= 2A
D
Low CollectorEmitter Saturation Voltage: V
CE(sat)
= 2V Max @ I
C
= 2A
D
CollectorEmitter Sustaining Voltage: V
CEO(sus)
= 80V Min
D
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
80mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
50W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.286W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
3.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 50mA, I
B
= 0
80
V
Collector Cutoff Current
I
CEO
V
CE
= 40V, I
B
= 0
0.5
mA
I
CER
V
CE
= 80V, V
EB(off)
= 1.5V
0.5
mA
V
CB
= 80V, V
EB(off)
= 1.5V, T
A
= +150
C
5.0
mA
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
2.0
mA
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 2A
750
18000
V
CE
= 3V, I
C
= 4A
100
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 2A, I
B
= 8mA
2.0
V
I
C
= 4A, I
B
= 40mA
3.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 4A, I
B
= 40mA
4.0
V
BaseEmitter ON Voltage
V
BE(on)
V
CE
= 3V, I
C
= 2A
2.8
V
Dynamic Characteristics
Magnitude of Common Emitter
SmallSignal ShortCircuit
Forward Current Transfer Ratio
|h
fe
|
I
C
= 1.5A, V
CE
= 3V, f = 1MHz
4.0
Output Capacitance
NTE274
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
120
pF
NTE275
200
pF
SmallSignal Current Gain
h
fe
I
C
= 1.5A, V
CE
= 3V, f = 1kHz
300
NTE274
NTE275
B
C
E
B
C
E
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360 (9.14)
Min
.031 (0.78) Dia
.960 (24.3)
Base
.580 (14.7)
.200
(5.08)
Emitter
Collector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
PDF 
ZIP