NTE287 (NPN) & NTE288 (PNP)
Silicon Complementary Transistors
High Voltage, General Purpose Amplifier
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBE
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
NTE287
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE288
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation @ T
A
= +25
C, P
D
625mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
C
5mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation @ T
C
= +25
C, P
D
1.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25
C
12mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
200
C/mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
83.3
C/mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 1
300
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
300
V
EmitterBase Breakdown Voltage
NTE287
V
(BR)EBO
I
E
= 100
A, I
C
= 0
6
V
NTE288
5
V
Collector Cutoff Current
NTE287
I
CBO
V
CB
= 200V, I
E
= 0
0.1
A
NTE288
0.25
A
Emitter Cutoff Current
NTE287
I
EBO
V
EB
= 6V, I
C
= 0
0.1
A
NTE288
V
EB
= 3V, I
C
= 0
0.1
A
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
NTE287 & NTE288
h
FE
I
C
= 1mA, V
CE
= 10V
25
I
C
= 10mA, V
CE
= 10V
40
NTE287
I
C
= 30mA, V
CE
= 10V
40
NTE288
25
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 20mA, I
B
= 2mA
0.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 20mA, I
B
= 2mA
0.9
V
SmallSignal Characteristics
Current Gain Bandwidth Product
f
T
I
C
= 10mA, V
CE
= 20V, f = 100MHz
50
MHz
CollectorBase Capacitance
NTE287
C
cb
V
CB
= 20V, I
E
= 0, f = 1MHz
3
pF
NTE288
6
pF
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
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