NTE2969
MOSFET
NChannel, Enhancement Mode
High Speed Switch
Features:
D
Avalanche Rugged Technology
D
Rugged Gate Oxide Technology
D
Low Input Capacitance
D
Improved Gate Charge
D
Extended Safe Operating Area
D
Lower Leakage Current
D
Low Static DrainSource OnState Resistance
Absolute Maximum Ratings:
DrainSource Voltage, V
DSS
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous
T
C
= +25
C
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
15.1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
100A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current (Pulsed), I
GM
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 2), E
AS
1429mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AS
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
27.8mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt
4.0V/ns
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
278W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
2.22W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+300
C
. . . . . . . . . . . . . .
Thermal Resistance:
Maximum JunctiontoCase, R
thJC
0.45
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical CasetoSink, R
thCS
0.24
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum JunctiontoAmbient, R
thJA
40
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 4mH, I
AS
= 25A, V
DD
= 50V, R
G
= 27
, Starting T
J
= +25
C.
Note 3. I
SD
25A, di/dt
320A/
s, V
DD
BV
DSS
, Starting T
J
= +25
C.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
400
V
Breakdown Voltage Temperature
Coefficient
D
BV/
D
T
J
I
D
= 250
A
0.20
V/
C
Gate Threshold Voltage
V
GS(th)
V
DS
= 5V, I
D
= 250
A
2.0
4.0
V
GateSource Leakage Forward
I
GSS
V
GS
= 30V
100
nA
GateSource Leakage Reverse
I
GSS
V
GS
= 30V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 400V, V
GS
= 0
10
A
V
DS
= 320V, T
C
= +150
C
100
A
Static DrainSource ON Resistance
R
DS(on)
V
GS
= 10V, I
D
= 12.5A, Note 4
0.2
Forward Transconductance
g
fs
V
DS
= 50V, I
D
= 12.5A, Note 4
18.91
mhos
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
3180
4130
pF
Output Capacitance
C
oss
435
500
pF
Reverse Transfer Capacitance
C
rss
200
240
pF
TurnOn Delay Time
t
d(on)
V
DD
= 200V
,
I
D
= 25A, R
G
= 5.3
,
22
55
ns
Rise Time
t
r
Note 4, Note 5
22
60
ns
TurnOff Delay Time
t
d(off)
127
260
ns
Fall Time
t
f
38
85
ns
Total Gate Charge
Q
g
V
GS
= 10V, I
D
= 25A, V
DS
= 320V,
140
182
nC
GateSource Charge
Q
gs
Note 4, Note 5
21
nC
GateDrain ("Miller") Charge
Q
gd
64.8
nC
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
I
S
(Body Diode)
25
A
Pulse Source Current
I
SM
(Body Diode) Note 1
100
A
Diode Forward Voltage
V
SD
T
J
= +25
C, I
S
= 25A, V
GS
= 0V, Note 4
1.5
V
Reverse Recovery Time
t
rr
T
J
= +25
C, I
F
= 25A, dI
F
/dt = 100A/
s
484
ns
Reverse Recovery Charge
Q
rr
7.6
C
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
250
s, Duty Cycle
2%.
Note 5. Essentially independent of operating temperature.
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