NTE2981
Logic Level MOSFET
NChannel, Enhancement Mode
High Speed Switch
Features:
D
Dynamic dv/dt Rating
D
Repetitive Avalanche rated
D
Logic Level Gate Drive
D
R
DS
(on) Specified at V
GS
= 4V & 5V
Absolute Maximum Ratings:
Drain Current, I
D
Continuous (V
GS
= 5V)
T
C
= +25
C
7.7A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
4.9A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
31A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
42W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.33W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (PC Board Mount, T
C
= +25
C, Note 2), P
D
2.5W
. . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.02W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 3), E
AS
210mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AR
7.7A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
4.2mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 4), dv/dt
5.5V/ns
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
L
+260
C
. . . . . . . . . .
Maximum Thermal Resistance:
JunctiontoCase, R
thJC
3.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JunctiontoAmbient (PCB Mount, Note 2), R
thJA
50
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JunctiontoAmbient, R
thJA
110
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. When mounted on a 1" square PCB (FR4 or G10 material).
Note 3. L = 5.3mH, V
DD
= 25V, R
G
= 25
, Starting T
J
= +25
C, I
AS
= 7.7A.
Note 4. I
SD
9.2A, di/dt
110A/
s, V
DD
V
(BR)DSS
, T
J
+150
C.
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
100
V
Breakdown Voltage Temperature
Coefficient
V
(BR)DSS
/
T
J
Reference to +25
C, I
D
= 1mA
0.13
V/
C
Static DrainSource ON Resistance
R
DS(on)
V
GS
= 5V, I
D
= 4.6A, Note 5
0.27
V
GS
= 4V, I
D
= 3.9A, Note 4
0.38
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1.0
2.0
V
Forward Transconductance
g
fs
V
DS
= 50V, I
D
= 4.6A, Note 5
4.4
mhos
DraintoSource Leakage Current
I
DSS
V
DS
= 100V, V
GS
= 0
25
A
V
DS
= 80V, V
GS
= 0V, T
C
= +125
C
250
A
GateSource Leakage Forward
I
GSS
V
GS
= 10V
100
nA
GateSource Leakage Reverse
I
GSS
V
GS
= 10V
100
nA
Total Gate Charge
Q
g
V
GS
= 5V, I
D
= 9.2A, V
DS
= 80V, Note 5
12
nC
GateSource Charge
Q
gs
3.0
nC
GateDrain ("Miller") Charge
Q
gd
7.1
nC
TurnOn Delay Time
t
d(on)
V
DD
= 50V
,
I
D
= 9.2A, R
G
= 9.0
,
9.8
ns
Rise Time
t
r
R
D
= 5.2
, Note 5
64
ns
TurnOff Delay Time
t
d(off)
21
ns
Fall Time
t
f
27
ns
Internal Drain Inductance
L
D
Between lead, 6mm (0.25") from
4.5
nH
Internal Source Inductance
L
S
package and center of die contact
7.5
nH
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
490
pF
Output Capacitance
C
oss
150
pF
Reverse Transfer Capacitance
C
rss
30
pF
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
I
S
(Body Diode)
7.7
A
Pulse Source Current
I
SM
(Body Diode) Note 1
31
A
Diode Forward Voltage
V
SD
T
J
= +25
C, I
S
= 7.7A, V
GS
= 0V, Note 5
2.5
V
Reverse Recovery Time
t
rr
T
J
= +25
C, I
F
= 9.2A, di/dt = 100A/
s,
110
140
ns
Reverse Recovery Charge
Q
rr
Note 5
0.8
1.0
C
Forward TurnOn Time
t
on
Intrinsic turnon time is neglegible
(turnon is dominated by L
S
+ L
D
)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
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