NTE2987
Logic Level MOSFET
NChannel, Enhancement Mode
High Speed Switch
Features:
D
Avalanche Rugged Technology
D
Logic Level Gate Drive
D
R
DS
(on) = 0.09
Typ. at V
GS
= 5V
D
+175
C Operating Temperature
D
Fast Switching
D
Low Gate Charge
D
High Current Capability
Absolute Maximum Ratings:
Drain Current, I
D
Continuous
T
C
= +25
C
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
14A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
80A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
105W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.7W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current, Repetitive or NonRepetitive (Note 2), I
AR
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 3), E
AS
120mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 2), E
AR
30mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current, Repetitive or NonRepetitive (Note 4), I
AR
14A
. . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainSource Voltage (V
GS
= 0), V
DS
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage (R
GS
= 20k
), V
DGR
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
L
+300
C
. . . . . . . . . .
Thermal Resistance:
Maximum JunctiontoCase, R
thJC
1.43
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical CasetoSink (Mounting surface flat, smooth, and greased), R
thCS
0.5
C/W
. . . . . .
Maximum JunctiontoAmbient (Free Air Operation), R
thJA
62.5
C/W
. . . . . . . . . . . . . . . . . . .
Note 1. Pulse width limited by safe operating area.
Note 2. Pulse width limited by T
J
max, Duty Cycle < 1%.
Note 3. V
DD
= 25V, I
D
= I
AR
, Starting T
J
= +175
C.
Note 4. T
C
= +100
C, Pulse width limited by T
J
max, Duty Cycle < 1%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF
DrainSource Breakdown Voltage
BV
DSS
V
GS
= 0v, I
D
= 250
A
100
V
DraintoSource Leakage Current
I
DSS
V
DS
= 100V, V
GS
= 0
1
A
V
DS
= 80V, V
GS
= 0V, , T
C
= +150
C
10
A
GateSource Leakage Forward
I
GSS
V
GS
= 15V
100
nA
GateSource Leakage Reverse
I
GSS
V
GS
= 15V
100
nA
ON (Note 5)
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1.0
1.6
2.5
V
Static DrainSource ON Resistance
R
DS(on)
V
GS
= 5V, I
D
= 10A
0.09
0.12
OnState Drain Current
I
D(on)
V
DS
> I
D(on)
x R
DS(on)
max, V
GS
= 10V
20
A
Dynamic
Forward Transconductance
g
fs
V
DS
> I
D(on)
x R
DS(on)
max, I
D
= 10A,
Note 5
10
16
mhos
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
1200
1500
pF
Output Capacitance
C
oss
250
350
pF
Reverse Transfer Capacitance
C
rss
60
90
pF
Switching
Total Gate Charge
Q
g
V
GS
= 5V, I
D
= 20A, V
DD
= 80V
22
30
nC
GateSource Charge
Q
gs
6
nC
GateDrain ("Miller") Charge
Q
gd
12
nC
TurnOn Delay Time
t
d(on)
V
DD
= 30V
,
I
D
= 10A, R
G
= 50
,
50
70
ns
Rise Time
t
r
V
GS
= 5V
140
200
ns
TurnOff Delay Time
t
d(off)
V
DD
= 80V
,
I
D
= 20A, R
G
= 50
,
80
110
ns
Fall Time
t
f
V
GS
= 5V
80
110
ns
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
I
S
(Body Diode)
20
A
Pulse Source Current
I
SM
(Body Diode) Note 1
80
A
Diode Forward Voltage
V
SD
I
SD
= 20A, V
GS
= 0V, Note 5
1.5
V
Reverse Recovery Time
t
rr
T
J
= +150
C, V
DD
= 50V, I
SD
= 20A,
130
ns
Reverse Recovery Charge
Q
rr
di/dt = 100A/
s
0.4
C
Reverse Recovery Current
I
RRM
6
A
Note 1. Pulse width limited by safe operating area.
Note 5. Pulse Test: Pulse Width = 300
s, Duty Cycle = 1.5%.
PDF 
ZIP