NTE2988
MOSFET
NChannel, Enhancement Mode
High Speed Switch
Description:
The NTE2988 is an NChannel, enhancement mode, power field effect transistor in a TO52 type
package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers.
Features:
D
High Input Impedance
D
Extremely Fast Switching
D
RuggedDissipation Limited SOA
D
Internal DrainSource Diode
Benefits:
D
Reduced Component Count
D
Simpler Designs Directly Interfaces CMOS & TTL
D
Improved Circuit Performance
D
Increased Reliability
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
DrainSource Voltage
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage
+15V, 0.3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current
Continuous (Note 1)
0.2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 2)
1.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Dissipation (T
C
= +25
C)
315mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Linear Derating Factor
2.5mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from case, 10sec), T
L
+300
C
. . . . . . . . . . . . . . . . . . . . .
Note 1. Limited by package dissipation.
Note 2. Pulse test 80
s to 300
s, 1% duty cycle.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
DrainSource Breakdown Voltage
BV
DSS
I
D
= 1000
A, V
GS
= 0
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA
0.8
2.5
V
GateBody Leakage
I
GSS
V
GS
= 15V, V
DS
= 0
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 50V, V
GS
= 0
10
A
OnState Drain Current
I
D(on)
V
GS
= 5V, I
D
= 0.2A, Note 2
1.5
V
V
GS
= 10V, I
D
= 0.5A, Note 2
2.5
V
StaticDrainSource OnState
r
DS(on)
V
GS
= 5V, I
D
= 0.2A, Note 2
7.5
Resistance
V
GS
= 10V, I
D
= 0.5A, Note 2
5.0
Dynamic Characteristics
Forward Transconductance
g
fs
V
DS
= 15V, I
D
= 0.5A, Note 2
200
mS
Input Capacitance
C
iss
V
DS
= 25V, f = 1MHz
60
pF
Reverse Transfer Capacitance
C
rss
5
pF
Common Source Output Capacitance
C
oss
25
pF
TurnOn Time
t
ON
V
DD
= 15V, R
L
= 23
, R
g
= 25
,
10
ns
TurnOff Time
t
OFF
I
D
= 0.6A
10
ns
DrainSource Diode Characteristics
Forward ON Voltage
V
SD
I
S
= 0.5A, V
GS
= 0, Note 2
0.85
V
Reverse Recovery Time
t
rr
V
GS
= 0, I
F
= I
R
= 0.5A
160
ns
Note 2. Pulse test 80
s to 300
s, 1% duty cycle.
45
.040 (1.01)
.019 (0.5) Dia
Source
Gate
Drain/Case
.230 (5.84) Dia Max
195 (4.95) Dia Max
.150 (3.81)
Max
.500 (12.7)
Min
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