NTE3017
Infrared Emitting Diode
High Speed for Remote Control
Description:
The NTE3017 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a
clear, bluegrey tinted plastic package.
Features:
D
Low Forward Voltage
D
High Radiant Power and Radiant Intensity
D
Suitable for DC and High Pulse Current Operation
D
High Reliability
D
Standard T1 3/4 (5mm) Package
Applications:
Infrared remote control and free air transmission systems with low forward voltage and comfort-
able radiation and angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Reverse Voltage, V
R
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
Continuous
150mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
300mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Forward Current (Note 2), I
FSM
2.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
210mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Soldering Temperature (t
5sec, 2mm from case), T
L
+260
C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
375K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. t
p
= 100
s, t
p
/T = 0.5
Note 2. t
p
= 100
s
Electrical Characteristics: (T
A
= +25
C unless otherwis specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Voltage
V
F
I
F
= 100mA, t
p
= 20ms
1.3
1.7
V
I
F
= 1.5A, t
p
= 100
s
2.2
3.4
V
Temperature Coefficient of Forward Voltage
I
F
= 100mA
1.3
mV/
C
Reverse Current
I
R
V
R
= 5V
100
A
Junction Capacitance
C
j
V
R
= 0, f = 1MHz, E = 0
30
pF
Radient Intensity
I
e
I
F
= 100mA, t
p
= 20ms
7
14
mW/sr
I
F
= 1.5A, t
p
= 100
s
60
140
mW/sr
Angle of Half Intensity
22
deg
Radient Power
e
I
F
= 100mA, t
p
= 20ms
13
mW
Temperature Coefficient of Radient Intensity
I
F
= 20mA
0.8
%/
C
Peak Wavelength
p
I
F
= 100mA
950
nm
Temperature Coefficient of Peak Wavelength
I
F
= 100mA
0.2
nm/
C
Spectral Bandwidth
I
F
= 100mA
50
nm
Rise Time
t
r
I
F
= 100mA
800
ns
I
F
= 1.5A
400
ns
Fall Time
t
f
I
F
= 100mA
800
ns
I
F
= 1.5A
400
ns
.040
(1.01)
.230
(5.84)
Dia
Flat Denotes
Cathode
.100 (2.54)
.100 (2.54) R
.200 (5.08) Dia
Seating Plane
.025 (0.63) Max Sq
.050 (1.27) Typ
.050 (1.27)
.100 (2.54)
.100 (2.54)
.340
(8.63)
.750
(19.05)
Min
Tolerance
.010 (.254)
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