NTE3032
Phototransistor Detector
NPNSi, Visible & IR
Description:
The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in
industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications
or any design requiring radiation sensitivity and stable characteristics.
Features:
D
Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D
Minimum Light Current: 8mH @ H = 5mW/cm
2
D
External Base for Added Control
D
Annular Passivated Structure for Stability and Reliability
D
Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterCollector Voltage, V
ECO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation, P
D
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.43mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Collector Dark Current
I
CEO
V
CC
= 10V, H
0
100
nA
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A
80
V
EmitterCollector Breakdown Voltage
V
(BR)ECO
I
E
= 100
A
5
V
Optical Characteristics
Light Current
I
L
V
CC
= 5V, R
L
= 100
, Note 1
8
mA
Photo Current Rise Time
t
r
R
L
= 100
, I
L
= 1mA (Peak),
15
s
Photo Current Fall Time
t
f
Note 2
15
s
Note 1. Radiation flux density (H) equal to 5mW/cm
2
emitted from a tungsten source at a color
temperature of 2870 K.
Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium
arsenide) lightemitting diode (
m) with a pulse width equal to or greater than 10
s,
I
L
= 1mA Peak.
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