NTE2428 (NPN) & NTE2429 (PNP)
Silicon Complementary Transistors
General Purpose Switch
Description:
The NTE2428 and NTE2429 are silicon complementary transistors in a SOT89 type surface mount
package designed for use in thick and thin film circuits. Typical applications include telephone and
general industrial.
Absolute Maximum Ratings:
CollectorBase Voltage (Open Emitter), V
CBO
90V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CER
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (Open Collector), V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Base Current, I
B
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
+25
C, Note 1), P
tot
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Note 1), R
thJA
125K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoTab, R
thJTAB
10K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
Electrical Characteristics: (T
J
= +25
C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 60V, I
E
= 0
100
nA
V
CB
= 60V, I
E
= 0, T
J
= +150
C
50
A
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
80
V
V
(BR)CES
I
C
= 10
A, V
BE
= 0
90
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 150mA, I
B
= 15mA, Note 2
250
mV
I
C
= 500mA, I
B
= 50mA, Note 2
500
mV
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 150mA, I
B
= 15mA, Note 2
1.0
V
I
C
= 500mA, I
B
= 50mA, Note 2
1.2
V
Note 2. Measured under pulsed conditions.
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