NTE335 & NTE336
Silicon NPN Transistor
RF Power Output
Description:
The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications
in industrial, commercial and amateur radio equipment to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 80W
Minimum Gain = 12dB
Efficiency
= 50%
D Available in Two Different Package Designs:
NTE335 (W52N, Flange Mount)
NTE336 (T93D, Stud Mount)
Absolute Maximum Ratings:
Collector-Emitter Voltage, V
CEO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-Base Voltage, V
CBO
45V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-Base Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25C), P
D
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25C
1.43W/C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
-65 to +150C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction-to-Case, R
thJC
0.7C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V
(BR)CEO
I
C
= 100mA, I
B
= 0
18
-
-
V
V
(BR)CES
I
C
= 50mA, V
BE
= 0
36
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 10mA, I
C
= 0
4
-
-
V
Electrical Characteristics (Cont'd): (T
C
= +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics
DC Current Gain
h
FE
I
C
= 5A, V
CE
= 5V
10
-
150
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 15V, I
E
= 0,
f = 1MHz
-
-
250
pF
Functional Tests
Common-Emitter Amplifier Power Gain
G
pe
V
CC
= 12.5V,
P
80W
12
-
-
dB
Collector Efficiency
P
OUT
= 80W,
f = 30MHz
50
-
-
%
Series Equivalent Input Impedance
Z
in
f = 30MHz
-
.938 - j.341
-
Series Equivalent Output Impedance
Z
out
-
1.16 - j.201
-
Parallel Equivalent Input Impedance
-
-
1.06
1817pF
-
Parallel Equivalent Output Impedance
-
-
1.19
777pF
-
.750
(19.05)
1.040 (26.4) Max
.725 (18.42)
NTE335
NTE336
E
C
B
E
.975 (24.77)
.480 (12.1) Dia
1.061 (25.95)
Ceramic Cap
.225 (5.72)
.065
(1.68)
.095 (2.42)
.127 (3.17) Dia
(2 Holes)
.260
(6.6)
.250
(6.35)
.520 (13.2)
E
E
C
B
.100 (2.54)
.005 (0.15)
.168 (4.27)
8-32-NC-3A
Wrench Flat
.230
(5.84)
.385
(9.8)
Dia
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