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Электронный компонент: NTE338

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NTE2583
Silicon NPN Transistor
High Speed Switching Regulator
Features:
D
High Breakdown Voltage and High Reliability
D
Fast Switching Speed
D
Wide ASO
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
A
= +25
C), P
C
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
C), P
C
35W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
300
s, Duty Cycle
10%.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 400V, I
E
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
10
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1.6A
20
50
V
CE
= 5V, I
C
= 8A
10
V
CE
= 5V, I
C
= 10mA
10
Current GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 1.6A
20
MHz
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
120
pF
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 6A, I
B
= 1.6A
0.8
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 6A, I
B
= 1.6A
1.5
V
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
500
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 5mA, R
BE
=
400
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
7
V
CollectorEmitter Sustaining Voltage
V
CEX(sus)
I
C
= 4.5A, I
B1
= 0.45A, I
B2
= 1.8A,
L = 500
H, Clamped
400
V
TurnOn Time
t
on
I
C
= 7A, I
B1
= 1.4A, I
B2
= 2.8A,
0.5
s
Storage Time
t
stg
R
L
= 28.6
, V
CC
= 200V, Note 2
2.5
s
Fall Time
t
f
0.3
s
Note 2. Pulse Width = 20
s, Duty Cycle
1%.
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
.114 (2.9) Max
.173 (4.4) Max
B
C
E
.122 (3.1)
Dia
NOTE: Tab is isolated