NTE349
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V
VHF largesignal amplifier applications required in military and industrial equipment to 240MHz.
Features:
D
Specified 13.6V, 175MHz Characteristics:
Output Power = 10W
Minimum Gain = 5.2dB
Efficiency = 50%
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CB
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
30W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0171mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 200mA, I
B
= 0
18
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 2.5mA, I
C
= 0
4
V
Collector Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
1.0
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 250mA, V
CE
= 5V
5
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 15V, I
E
= 0, f = 0.1 to 1MHz
35
70
pF
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