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Электронный компонент: NTE363

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NTE2341(NPN) & NTE2342 (PNP)
Silicon Complementary Transistors
Darlington Driver
Description:
The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a
TO92 type package designed for general purpose, low frequency applications and as relay drivers.
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
tot
T
A
= +25
C
800mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +25
C, Note 1
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoAmbient, R
thJA
156K/W
. . . . . . . . . . . . . . . . . . . . . . . . .
Note 1
125K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm
x 10mm.
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitterBreakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
80
V
CollectorBaseBreakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
B
= 0
100
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
5
V
Collector Cutoff Current
I
CEO
V
CE
= 40V, I
B
= 0
500
nA
I
CBO
V
CB
= 100V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
CE
= 4V, I
C
= 0
100
nA
DC Current Gain
h
FE
I
C
= 150mA, V
CE
= 10V
1000
I
C
= 500mA, V
CE
= 10V
2000
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 0.5mA
1.3
V
I
C
= 1A, I
B
= 1mA
1.8
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 1A, I
B
= 1mA, Note 3
2.2
V
Transition Frequency
f
T
I
C
= 500mA, V
CE
= 5V,
f = 100MHz
200
MHz
B
C
E
B
C
E
.021 (.445) Dia Max
E C B
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
NTE2341
(NPN)
NTE2342
(PNP)