NTE2341(NPN) & NTE2342 (PNP)
Silicon Complementary Transistors
Darlington Driver
Description:
The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a
TO92 type package designed for general purpose, low frequency applications and as relay drivers.
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, P
tot
T
A
= +25
C
800mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +25
C, Note 1
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoAmbient, R
thJA
156K/W
. . . . . . . . . . . . . . . . . . . . . . . . .
Note 1
125K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm
x 10mm.
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitterBreakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
80
V
CollectorBaseBreakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
B
= 0
100
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
5
V
Collector Cutoff Current
I
CEO
V
CE
= 40V, I
B
= 0
500
nA
I
CBO
V
CB
= 100V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
CE
= 4V, I
C
= 0
100
nA
DC Current Gain
h
FE
I
C
= 150mA, V
CE
= 10V
1000
I
C
= 500mA, V
CE
= 10V
2000