NTE385
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
switch mode applications.
Features:
D
Fast TurnOff Times
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO(sus)
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (V
BE
= 1.5V), V
CEX
850V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Overload
60A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
175W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.0W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +100
C), P
D
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+275
C
. . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 200mA, I
B
= 0, L = 25mH
400
V
Collector Cutoff Current
I
CEX
V
CEX
= 850V, V
BE(off)
= 1.5V
0.2
mA
V
CEV
= 850V, V
BE(off)
= 1.5V, T
C
= +125
C
2.0
mA
I
CER
V
CE
= 850V, R
BE
= 10
0.5
mA
V
CE
= 850V, R
BE
= 10
, T
C
= +100
C
3.0
mA
Emitter Cutoff Current
I
EBO
V
BE
= 5V, I
C
= 0
0.1
mA
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 50mA, I
C
= 0
7
V
Note 2. Pulse test: Pulse Width = 300
s, Duty Cycle
2%, V
cl
= 300V, V
BE(off)
= 5V, L
C
= 180
H.
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics (Note 2)
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 10A
8
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 2A
1.5
V
I
C
= 10A, I
B
= 2A, T
C
= +100
C
2.0
V
I
C
= 8A, I
B
= 1.6A
1.5
V
I
C
= 8A, I
B
= 1.6A, T
C
= +100
C
2.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10A, I
B
= 2A
1.6
V
I
C
= 10A, I
B
= 2A, T
C
= +100
C
1.6
V
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f
test
= 1kHz
350
pF
Switching Characteristics (Resistive Load)
Delay Time
t
d
V
CC
= 300V, I
C
= 10A, I
B
= 2A,
0.1
0.2
s
Rise Time
t
r
t
p
= 30
s, Duty Cycle = 2%,
V
= 5V
0.4
0.7
s
Storage Time
t
s
V
BE(off)
= 5V
1.3
2.0
s
Fall Time
t
f
0.2
0.4
s
Switching Characteristics (Inductive Load, Clamped)
Storage Time
t
sv
I
C
= 10A, I
B1
= 2A, T
C
= +25
C
1.3
s
Fall Time
t
fi
0.06
s
Storage Time
t
sv
I
C
= 10A, I
B1
= 2A, T
C
= +100
C
1.5
2.5
s
Crossover Time
t
c
0.3
0.6
s
Fall Time
t
fi
0.17
0.35
s
Note 2. Pulse test: Pulse Width = 300
s, Duty Cycle
2%, V
cl
= 300V, V
BE(off)
= 5V, L
C
= 180
H.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
BASE
COLLECTOR
EMITTER
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