NTE386
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high
speed power switching in inductive circuit where fall time is critical. This device is particularly suited
for line operated switchmode applications.
Applications:
D
Switching Regulators
D
Inverters
D
Solenoid and Relay Drivers
D
Motor Controls
D
Deflection Circuits
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO(sus)
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEV
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
C
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +100
C), P
D
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
175W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.0W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+275
C
. . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0
500
V
Collector Cutoff Current
I
CEV
V
CEV
= 800V, V
EB(off)
= 1.5V
0.25
mA
I
CER
V
CE
= 800V, R
BE
= 50
, T
C
= +100
C
5.0
mA
Emitter Cutoff Current
I
EBO
V
BE
= 6V, I
C
= 0
1.0
mA
ON Characteristics (Note 2)
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 5A
10
60
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 2A
1.8
V
I
C
= 20A, I
B
= 6.7A
5.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10A, I
B
= 2A
1.8
V
Dynamic Characteristics
Output Capacitance
C
cb
V
CB
= 10V, I
E
= 0, f
test
= 1kHz
125
500
pF
Switching Characteristics (Resistive Load)
Dealy Time
t
d
V
CC
= 250V, I
C
= 10A, I
B1
= 2A,
0.02
0.1
s
Rise Time
t
r
V
BE(off)
= 5V, t
p
= 10
s,
Duty Cycle
2%
0.3
0.7
s
Storage Time
t
s
Duty Cycle
2%
1.6
4.0
s
Fall Time
t
f
0.3
0.7
s
Note 2. Pulse Test: Pulse Width = 300ms, Duty Cycle
2%.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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