NTE394
Silicon NPN Transistor
Power Amp, High Voltage Switch
Description:
The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use
in high voltage, fast switching applications.
Absolute Maximum Ratings:
CollectorEmitter Voltage (V
BE
= 0), V
CES
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (I
B
= 0), V
CEO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (I
C
= 0), V
EB
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
600mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
tot
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.25
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorEmitter Cutoff Current
I
CEO
V
CE
= 300V, I
B
= 0
1
mA
I
CES
V
CE
= 500V, V
EB
= 0
1
mA
EmitterBase Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
1
mA
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 30mA, I
B
= 0, Note 1
400
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 3A, I
B
= 0.6A, Note 1
1.5
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 3A, V
CE
= 10V, Note 1
1.5
V
DC Current Gain
h
FE
I
C
= 0.3A, V
CE
= 10V
30
150
I
C
= 3A, V
CE
= 10V
10
Note 1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 1.5%.
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