NTE452
Silicon NChannel JFET Transistor
VHF Amplifier, Mixer
Description:
The NTE452 is a silicon, Nchannel junction field effect tranistor (JFET) in a TO72 type package de-
signed to be used in the depletion mode in VHF/UHF amplifiers.
Absolute Maximum Ratings:
DrainSource Voltage, V
DS
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage, V
DG
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G
10mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.71mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
GateSource Breakdown Voltage
V
(BR)GSS
I
G
= 1
s, V
DS
= 0
30
V
Gate Reverse Current
I
GSS
V
GS
= 20V, V
DS
= 0
100
pA
V
GS
= 20V, V
DS
= 0, T
A
= +150
C
200
pA
GateSource Cutoff Voltage
V
GS(off)
I
D
= 1nA, V
DS
= 15V
6
V
GateSource Voltage
V
GS
I
D
= 0.5mA, V
DS
= 15V
1.0
5.5
V
GateSource Forward Voltage
V
GS(f)
I
G
= 1mA, V
DS
= 0
1.0
V
ON Characteristics (Note 1)
ZeroGate Voltage Drain Current
I
DSS
V
DS
= 15V, V
GS
= 0
5
15
mA
SmallSignal Characteristics
Forward Transfer Admittance
|Y
fs
|
V
DS
= 15V, V
GS
= 0, f = 1kHz, Note 1
4500
7500
mhos
Real Part of Forward Transfer
Admittance
Y
fs(real)
V
DS
= 15V, V
GS
= 0, f = 400MHz
4000
mhos
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
1%.
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SmallSignal Characteristics (Cont'd)
Real Part of Input Admittance
Y
is(real)
V
DS
= 15V, V
GS
= 0, f = 100MHz
100
mhos
V
DS
= 15V, V
GS
= 0, f = 400MHz
1000
mhos
Output Admittance
|Y
os
|
V
DS
= 15V, V
GS
= 0, f = 1kHz
50
mhos
Real Part of Output Admittance
Y
os(real)
V
DS
= 15V, V
GS
= 0, f = 100MHz
75
mhos
V
DS
= 15V, V
GS
= 0, f = 400MHz
100
mhos
Imaginary Part of Input Admittance
Y
is(imag)
V
DS
= 15V, V
GS
= 0, f = 100MHz
2500
mhos
V
DS
= 15V, V
GS
= 0, f = 400MHz
10k
mhos
Imaginary Part of Output
Y
os(imag)
V
DS
= 15V, V
GS
= 0, f = 100MHz
1000
mhos
Admittance
V
DS
= 15V, V
GS
= 0, f = 400MHz
4000
mhos
Input Capacitance
C
iss
V
DS
= 15V, V
GS
= 0, f = 1MHz
4.0
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 15V, V
GS
= 0, f = 1MHz
0.8
pF
CommonSource Output
Capacitance
C
oss
V
DS
= 15V, V
GS
= 0, f = 1MHz
2.0
pF
Functional Characteristics
Noise Figure
NF
V
DS
= 15V, I
D
= 5mA, R
g
1000
,
f = 100MHz
2.0
dB
V
DS
= 15V, I
D
= 5mA, R
g
1000
,
f = 400MHz
4.0
dB
SmallSignal Power Gain
G
ps
V
DS
= 15V, I
D
= 5mA, f = 100MHz
18
dB
CommonSource
V
DS
= 15V, I
D
= 5mA, f = 400MHz
10
dB
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.040 (1.02)
.018 (0.45) Dia
45
Source
Drain
Gate
Case
.190
(4.82)
.500
(12.7)
Min
PDF 
ZIP