NTE458
NChannel Silicon JFET
General Purpose, Low Noise, Audio Frequency Amplifier
Features:
D
Very Low Noise
D
Low Gate Current
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
GateDrain Voltage, V
GDO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GSO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainSource Voltage (V
DS
= 2V), V
DSX
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
20mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G
10mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation, P
T
250mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Reverse Current
I
GSS
V
GS
= 20V, V
DS
= 0
1
nA
ZeroGate Voltage Drain Current
I
DSS
V
DS
= 10V, V
GS
= 0
0.5
3.0
12
mA
GateSource Voltage
V
GS(off)
V
DS
= 10V, I
D
= 10
A
0.13
0.5
1.5
V
Forward Transconductance
g
fs
V
DS
= 10V, I
D
= 0.5mA, f = 1kHz
4.0
5.2
mhos
V
DS
= 10V, V
GS
= 0, f = 1MHz
4.0
12
mhos
Input Capacitance
C
iss
V
DS
= 10V, V
GS
= 0, f = 1MHz
13
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10V, V
GS
= 0, f = 1MHz
2.6
pF
Noise Frequency
NF
V
DS
= 10V, V
GS
= 0, R
G
= 1k
,
f = 10Hz
5.0
10
dB
V
DS
= 10V, V
GS
= 0, R
G
= 1k
,
f = 100Hz
1.0
3.0
dB
V
DS
= 10V, V
GS
= 0, R
G
= 1k
,
f = 1kHz
0.6
1.5
dB
Noise Voltage
NV
I
D
= 0.5mA, R
G
= 1k
,
f = 10Hz to 1kHz (at V
G
= 3dB)
15
20
mV
PDF 
ZIP