NTE53
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, highspeed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
115V and 220V lineoperated switchmode appliations.
Applications:
D
Switching Regulators
D
PWM Inverters and Motor Controls
D
Deflection Circuits
D
Solenoid and Relay Drivers
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO(sus)
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEX(sus)
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEV
850V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EB
9V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
175W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.0W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +100
C), P
D
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperatur Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperatur Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead temperature (During Soldering, 1/8" from case, 5sec), T
L
+275
C
. . . . . . . . . . . . . . .
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
10%.
Electrical Charactetristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0
400
V
V
CEX(sus)
I
C
= 8A, V
clamp
= 450V, T
C
= +100
C
450
V
I
C
= 15A, V
clamp
= 300V, T
C
= +100
C
300
V
Collector Cutoff Current
I
CEV
V
CEV
= 850V, V
BE(off)
= 1.5V
1.0
mA
V
CEV
= 850V, V
BE(off)
= 1.5V,
T
C
= +100
C
4.0
mA
I
CER
V
CE
= 850V, R
BE
= 50
, T
C
= +100
C
5.0
mA
Emitter Cutoff Current
I
EBO
V
EB
= 9V, I
C
= 0
1.0
mA
Second Breakdown
Second Breakdown Collector
Current with Base Forward Bias
I
S/b
V
CE
= 100V, t = 1.0s (nonrepetitive)
0.2
A
ON Characteristics (Note 2)
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 5A
12
60
V
CE
= 2V, I
C
= 10A
6
30
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10A, I
B
= 2A
1.5
V
I
C
= 10A, I
B
= 2A, T
C
= +100
C
2.5
V
I
C
= 15A, I
B
= 3A
5.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10A, I
B
= 2A
1.6
V
I
C
= 10A, I
B
= 2A, T
C
= +100
C
1.6
V
Dynamic Characteristics
Current GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 500mA, f = 1MHz
6
28
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
125
500
pF
Switching Characteristics (Resistive Load)
Delay Time
t
d
V
CC
= 250V, I
C
= 10A, I
B1
= I
B2
=2A,
0.05
s
Rise Time
t
r
t
p
= 300
s, Duty Cycle
2%
1.0
s
Storage Time
t
s
4.0
s
Fall Time
t
f
0.7
s
Switching Characteristics (Inductive Load, Clamped)
Storage Time
t
sv
I
C
= 10A peak, V
clamp
= 450V, I
B1
= 2A,
2.0
s
Fall Time
t
fi
V
BE(off)
= 5V
0.09
s
Storage Time
t
sv
I
C
= 10A peak, V
clamp
= 450V, I
B1
= 2A,
5.0
s
Fall Time
t
fi
V
BE(off)
= 5V, T
J
= +100
C
1.5
s
Note 2. Pulse test: Pulse Width = 300
s, Duty Cycle
2%.
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