NTE5514 thru NTE5516
Silicon Controlled Rectifier (SCR)
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (T
J
= +100
C), V
DRM
NTE5514
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5515
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5516
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage (T
J
= +100
C), V
RRM
NTE5514
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5515
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5516
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +75
C), I
T(RMS)
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current (One Cycle, 50Hz or 60Hz), I
TSM
200A
. . . . . . . . .
Peak GateTrigger Current (3
s Max), I
GTM
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (I
GT
I
GTM
for 3
s Max), P
GM
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average GatePower Dissipation, P
G(AV)
0.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperatue Range, T
opr
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
1.3
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Peak OffState Current
I
DRM
,
I
RRM
T
J
= +100
C, Gate Open,
V
DRM
and V
RRM
= Max. Rating
2.0
mA
Maximum OnState Voltage (Peak)
V
TM
T
C
= +25
C
1.9
V
Peak OnState Current
I
TM
40
A
DC Holding Current
I
H
T
C
= +25
C, Gate Open
50
mA
DC GateTrigger Current
I
GT
Anode Voltage = 12V, R
L
= 30
, T
C
= +25
C
25
mA
DC GateTrigger Voltage
V
GT
Anode Voltage = 12V, R
L
= 30
, T
C
= +25
C
2.0
V
Gate Controlled TurnOn Time
t
gt
t
d
+ t
r
, I
GT
= 150mA
2.5
s
Critical RateofRise of
OffState Voltage
Critical
dv/dt
T
C
= +100
C, Gate Open
100
V/
s
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