NTE295
Silicon NPN Transistor
RF Power Output, Driver
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
75V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (R
BE
= 150
), V
CER
75V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
45V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
1.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
A
= +25
C), P
C
750mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
C), P
C
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 40V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
1.0
A
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10
A, I
E
= 0
75
V
CollectorEmitter Breakdown Voltage
V
(BR)CER
I
C
= 1mA, R
BE
= 150
75
V
V
(BR)CEO
I
C
= 1mA, R
BE
=
45
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
V
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 500mA
60
320
Current Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 50mA
180
250
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 50mA
0.2
0.6
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 500mA, I
B
= 50mA
0.9
1.2
V
Output Capacitance
C
ob
V
CB
= 10V, f = 1MHz
15
25
pF
Output Power
P
O
V
CC
= 12V, f = 27MHz, P
i
= 35mW
1.0
1.8
W
Collector Efficiency
60
%
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