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Электронный компонент: NTE56070

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NTE56070 & NTE56071
TRIAC, 25A, High Commutation
Description:
The NTE56070 and NTE56071 are glass passivated, high commutation TRIACs in a TO220 type
package designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full rated RMS current at the maximum rated junction temperature,
without the aid of a snubber.
Absolute Maximum Ratings:
Repetitive Peak OffSate Voltage (Note 1), V
DRM
NTE56070
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56071
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (Full Sine Wave, T
MB
91
C), I
T
(RMS)
25A
. . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak OnState Current, I
TSM
(Full Sine Wave, T
J
= +25
C prior to Surge)
t = 20ms
190A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t = 16.7ms
209A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
2
t for Fusing (t = 10ms), I
2
t
180A
2
sec
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive RateofRise of OnState Current after Triggering, dI
T
/dt
(I
TM
= 30A, I
G
= 0.2A, dI
G
/dt = 0.2A/
s)
100A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, I
GM
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage, V
GM
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power, P
GM
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power (Over Any 20ms Period), P
G(AV)
500mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoMounting Base, R
thJMB
Full Cycle
1.0K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Half Cycle
1.4K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoAmbient, R
thJA
60K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Although not recommended, offstate voltages up to 800V may be applied without damage,
but the TRIAC may switch to the onstate. The rateofrise of current should not exceed
15A/
s.
Electrical Characteristics: (T
J
= +25
C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Gate Trigger Current
MT
2
(+), G (+)
I
GT
V
D
= 12V, I
T
= 0.1A, Note 2
2
18
50
mA
MT
2
(+), G ()
2
21
50
mA
MT
2
(), G ()
2
34
50
mA
Latching Current
MT
2
(+), G (+)
I
L
V
D
= 12V, I
T
= 0.1A
31
60
mA
MT
2
(+), G ()
34
90
mA
MT
2
(), G ()
30
60
mA
Holding Current
I
H
V
D
= 12V, I
T
= 0.1A
31
60
mA
OnState Voltage
V
T
I
T
= 30A
1.3
1.55
V
Gate Trigger Voltage
V
GT
V
D
= 12V, I
T
= 0.1A
0.7
1.5
V
V
D
= 400V, I
T
= 0.1A, T
J
= +125
C
0.25
0.4
V
OffState Leakage Current
I
D
V
D
= V
DRM
max, T
J
= +125
C
0.1
0.5
mA
Dynamic Characteristics
Critical RateofRise of
OffState Voltage
dV
D
/dt
V
DM
= 67% V
DRM
max, T
J
= +125
C,
Exponential Waveform, Gate Open
1000
4000
V/
s
Critical RateofChange of
Commutating Current
dI
com
/dt
V
DM
= 400V, T
J
= +125
C, I
T
RMS = 25A,
without Snubber, Gate Open
44
A/ms
Gate Controlled TurnOn Time
t
gt
I
TM
= 12A, V
D
= V
DRM
max, I
G
= 0.1A,
dI
G
/dt = 5A/
s
2
s
Note 2. Device does not trigger in the MT
2
(), G (+) quadrant.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
MT
2
.070 (1.78) Max
.100 (2.54)
MT
1
MT
2
Gate
.110 (2.79)