NTE5650 thru NTE5653
TRIAC 100V
RM
, 2.5A
Description:
The NTE5650 through NTE5653 sensitive gate TRIACs are designed to be driven directly with IC and
MOS devices. These devices features a voidfree glass passivated chip and are hermetically sealed
in TO5 outline cans.
The NTE5650 through NTE5653 are bidirectional triode thyristors and may be switched from off
state to conduction for either polarity of applied voltage with positive or negative gatetrigger current
and are designed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (T
J
= +90
C, Gate Open, Note 1), V
DROM
NTE5650
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5651
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5652
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5653
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +75
C and Conduction Angle of 360
), I
T(RMS)
3A
. . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current (OneCycleat 50Hz or 60Hz), I
TSM
30A
. . . . . . . .
Peak GateTrigger Current (3
sec, Max.), I
GTM
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (I
GT
I
GTM
for 3
sec. Max.), P
GM
20W
. . . . . . . . . . . . . . . . . . . . . . . .
Average GatePower Dissipation, P
G(AV)
0.2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range (T
C
), T
opr
40
to +90
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
4
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. All values apply in either direction.
Electrical Characteristics: (At Maximum Ratings & Specified Case Temperature)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Peak OffState Current
I
DROM
T
J
= +90
C, V
DROM
= Max Rating,
Gate Open, Note 1
0.75
mA
Maximum OnState Voltage
V
TM
T
C
= +25
C, i
T
= 5A (Peak), Note 1
1.85
V
DC Holding Current
I
HO
T
C
= +25
C, Gate Open
5
mA
Critical RateofRise of OffState
Voltage
Critical
dv/dt
T
C
= +90
C, v
D
= V
DROM
, Gate Open,
Note 1
3
V/
s
DC GateTrigger Current
MT
2
(+) Gate (+), MT
2
() Gate ()
I
GT
T
C
= + 25
C, v
D
= 6V, R
L
= 39
3
mA
MT
2
(+) Gate (), MT
2
() Gate (+)
Note 1. All values apply in either direction.
PDF 
ZIP