NTE5655 thru NTE5657
TRIAC 800mA
Sensitive Gate
Description:
The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed
to be driven directly with IC and MOS devices. These TRIACs feature voidfree glass passivated
chips.
These NTE devices are bidirectional triode thyristors and may be switched from offstate to conduc-
tion for either polarity of applied voltage with positive or negative gate trigger current. They are de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (Gate Open, T
J
= +100
C), V
DRM
NTE5655
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5656
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5657
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +75
C, Conduction Angle of 360
C), I
TRMS
800mA
. . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current (One Cycle, 50Hz or 60Hz), I
TSM
8A
. . . . . . . . . . .
Peak GateTrigger Current (3
s Max), I
GTM
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (I
GT
I
GTM
for 3
s Max), P
GM
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average GatePower Dissipation, P
G(AV)
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
75
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak OffState Current
I
DRM
V
DRM
= Max Rating, Gate Open,
T
J
= +100
C
0.75
mA
Max. OnState Voltage
V
TM
i
T
= 800mA (Peak)
1.9
V
DC Holding Current
I
H
Gate Open
15
mA
Critical RateofRise of OffState Voltage
Critical
dv/dt
V
D
= V
DRM
, Gate Open, T
C
= +100
C
10
V/
s
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