NTE601
Silicon Varistor
Temperature Compensating Diode
Features:
D
High reliability planar chip and glass sealing
D
Low I
R
D
Large P
D
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Maximum Forward Current, I
FM
150mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
R
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
150mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Reverse Current
I
R
V
R
= 6V
10
A
Forward Voltage
V
F
I
F
= 1.5mA
0.59
0.64
V
I
F
= 50mA
1.1
V
Forward Voltage Change with Respect to Temperature
V
F
/
T
I
F
= 1.5mA
2.0
mV/
C
.500 (12.7)
Min
.500 (12.7)
Min
.118
(3.0)
Max
.099 (2.51) Max
.099 (2.51) Max
.022 (0.56) Max
.080 (2.03)
Dia Max
Color Band Denotes Cathode
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