NTE594
Silicon Diode, Bandswitch
Description:
The NTE594 is a silicon band switching diode in an SOT23 type surface mount package intended
for thick and thinfilm circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V
R
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Forward Current, I
F
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
+25
C), P
tot
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
430K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Voltage
V
F
I
F
= 100mA
1.2
V
Reverse Current
I
R
V
R
= 20V
100
nA
V
R
= 20V, T
J
= 60
C
1
A
Series Resistance
r
D
I
F
= 5mA
0.5
0.7
Diode Capacitance
C
d
V
R
= 20V, f = 1MHz
0.8
1.0
pF
.098
(2.5)
Max
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)
.016 (0.48)
.037 (0.95)
A
K
N.C.
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