NTE592
Silicon Diode, General Purpose, High Voltage
Description:
The NTE592 is a silicon epitaxial highspeed diode in an SOT23 type surface mount package. This
device is intended for switching and general purposes applications.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V
R
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage, V
RRM
250V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak Forward Current (t = 1s), I
FSM
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Rectified Forward Current (Average over any 20ms period, Note 1), I
F(Av)
200mA
. . . . . .
DC Forward Current (T
A
+25
C, Note 2), I
F
200mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Forward Current, I
FRM
625mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
+25
C), P
tot
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Note 2), R
thJA
430K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, TabtoSoldering Points, R
thTS
280K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Soldering PointstoAmbient, R
thSA
90K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Measured under pulse conditions: Pulse Time = t
p
0.3ms.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Voltage
V
F
I
F
= 100mA
1.00
V
I
F
= 200mA
1.25
V
Reverse Breakdown Voltage
V
(BR)R
I
R
= 100
A, Note 1 & 3
250
V
Reverse Current
I
R
V
R
= 200V
100
nA
V
R
= 200V, T
J
= +150
C
100
A
Differential Resistance
r
diff
I
F
= 10mA
5
Diode Capacitance
C
d
V
R
= 0, f = 1MHz
5
pF
Reverse Recovery Time
(When switched from
I
F
= 30mA to I
R
= 30mA
t
rr
measured at I
R
= 3mA,
R
L
= 100
50
ns
Note 1. Measured under pulse conditions: Pulse Time = t
p
0.3ms.
Note 3. At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V.
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