NTE6093
Silicon Rectifier
Dual, Schottky Barrier
Description:
The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle
with a Molybenum barrier metal.
Features:
D
Low Forward Voltage
D
GuardRing for Stress Protection
D
Low Power Loss & High Efficiency
D
Guarantee Reverse Avalanche
D
+125
C Operating Junction Temperature
D
High Surge Capacity
D
Low Storied Charge majority Carrier Conduction
D
Low Switching Noise
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V
RRM
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Working Peak Reverse Voltage, V
RWM
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Blocking Voltage, V
R
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Reverse Voltage, V
R(RMS)
42V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Rectifier Forward Current (V
R
= 60V, T
C
= +125
C), I
F(AV)
Per Diode
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
60A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Repetitive Forward Current (V
R
= 60V, Square Wave, T
C
= +125
C), I
FM
60A
. . . . . . . . . . . . .
NonRepetitive Peak Surge Current, I
FSM
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz)
600A
. . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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