NTE2315
Silicon NPN Transistor
Fast Switching Power Darlington
Description:
The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package
with an integrated baseemitter speedup diode designed for use in high voltage, high current, fast
switching applications. In particular, the NTE2315 can be used in horizontal output stages of 110
CRT video displays and is primarily intended for large screen displays.
Absolute Maximum Ratings:
CollectorBase Voltage (I
E
= 0), V
CBO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (V
BE
= 6V), V
CEV
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (I
B
= 0), V
CEO
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (I
C
= 0), V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Damper Diode Peak Forward Current, I
DM
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
+25
C), P
tot
60W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperatuere Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2.08
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
70
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CES
V
CE
= 400V, V
BE
= 0
100
A
I
CEV
V
CE
= 400V, V
BE
= 6V
100
A
Emitter Cutoff Current
I
EBO
V
EB
= 6V, I
C
= 0
3
mA
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
200
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 5A, I
B
= 50mA, Note 1
1.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 5A, I
B
= 50mA, Note 1
2.0
V
DC Current Gain
h
FE
I
C
= 3A, V
CE
= 5V
3500
Note 1. Pulse test: Pulse Duration = 300
s, Duty Cycle = 1.5%.
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