NTE367
Silicon NPN Transistor
RF Power Amplifier
P
O
= 45W @ 512MHz
Description:
The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF
largesignal amplifier applications in industrial and commercial FM equipment operating to 512MHz.
Features:
D
Specified 12.5V, 470MHz Characteristics:
Output Power: 45W
Minimum Gain: 4.8dB
Efficiency: 55%
D
Characterized with Series Equivalent LargeSignal Impedance Parameters
D
BuiltIn Matching Network for Broadband Operation
D
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and
50% Overdrive
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
16V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
9A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
117W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
670mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, R
JC
1.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 20mA, I
B
= 0
16
V
V
(BR)CES
I
C
= 20mA, V
BE
= 0
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 5mA, I
C
0
4
V
Collector Cutoff Current
I
CES
V
CE
= 15V, V
BE
= 0, T
C
= +25
C
10
mA
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
h
FE
I
C
= 4A, V
CE
= 5V
20
70
150
Dynamic Characteristics
Output Capacitance
C
ob
V
CB
= 12.5V, I
E
= 0, f = 1MHz
90
125
pF
Functional Tests
CommonEmitter Amplifier Power Gain
G
pe
V
CC
= 12.5V, P
O
= 45W,
4.8
5.4
dB
Collector Efficiency
I
C
(Max) = 5.8A, f = 470MHz
55
60
%
Input Power
P
in
V
CC
= 12.5V, P
O
= 45W,
f = 470MHz
13
15
W
Load Mismatch Stress
y
V
CC
= 16V, f = 470MHz,
VSWR = 20:1, All Phase Angles,
Note 1, Note 2
No Degradation in
Output Power
Series Equivalent Input Impedance
Z
in
V
CC
= 12.5V, P
O
= 45W,
1.4+j4.0
Series Equivalent Output Impedance
Z
OL
f = 470MHz
1.2+j2.8
Note 1. P
in
= 150% of Drive Requirement for 45W output @ 12.5V.
Note 2.
y
= Mismatch stress factor the electrical criterion established to verify the device resistance
to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.
.205 (5.18)
.215 (5.48)
.122 (3.1) Dia
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.160 (4.06)
.270
(6.85)
.405
(10.3)
Min
.725 (18.43)
.975 (24.78)
E
B
C
E
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