NTE65
Silicon NPN Transistor
High Voltage, Low Noise for CATV, MATV
Description:
The NTE65 is silicon NPN transistor designed primarily for use in highgain, lownoise, smallsignal
amplifier and also used in applications requiring fast switching times.
Features:
D
High CurrentGain Bandwidth Product
D
Low Noise Figure
D
High Power Gain
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
30mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +60
C), P
D
180mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 60
C
2.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thremal Resistance, JunctiontoAmbient, R
thJA
500
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
15
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
20
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
3
V
Collector Cutoff Current
I
CBO
V
CB
= 10V, I
E
= 0
50
nA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 14mA
25
250
G
max
=
|S
21
|
2
(I |S
11
|
2
) (I |S
22
|
2
)
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics
CurrentGain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 14mA, f = 0.5GHz
5.0
GHz
CollectorBase Capacitance
C
cb
V
CB
= 10V, I
E
= 0, f = 1MHz
0.5
1.0
pF
Functional Tests
Noise Figure
NF
V
CE
= 10V, I
C
= 2mA, f = 0.5GHz
2.4
dB
V
CE
= 10V, I
C
= 2mA, f = 1.0GHz
3.0
dB
Power Gain at Optimum Noise Figure
G
NF
V
CE
= 10V, I
C
= 2mA, f = 0.5GHz
15
dB
V
CE
= 10V, I
C
= 2mA, f = 1.0GHz
10
dB
Maximum Available Power Gain
G
max
V
CE
= 10V, I
C
= 2mA, f = 0.5GHz
18
dB
(Note 1)
V
CE
= 10V, I
C
= 2mA, f = 1.0GHz
12
dB
Note 1.
.197 5.0)
.354 (9.0)
.098 (2.5)
.039 (1.0)
.205 (5.2) Dia Max
.005 (0.15)
.197
(5.0)
.147
(3.75)
Max
Collector
Base
Emitter
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